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| 2N2218AL Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2218ALJ) * JANTX level (2N2218ALJX) * JANTXV level (2N2218ALJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * General purpose * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/251 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate above 25OC Power Dissipation, TC = 25OC Derate above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Rating 50 75 6 800 0.8 4.6 3.0 17.0 -55 to +200 -55 to +200 Unit Volts Volts Volts mA W mW/C W mW/C C C Copyright 2002 Rev. K Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2218AL Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55OC IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICES IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150OC VCE = 50 Volts VEB = 6 Volts VEB = 4 Volts Min 30 75 100 100 30 35 0.6 Typ Min 50 10 10 10 10 10 10 Typ Max Units Volts A nA A nA A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Max 325 300 Units DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.2 2.0 0.3 1.0 Volts Volts Symbol |hFE| hFE COBO CIBO Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 2.5 75 Typ Max 12 Units 8 25 pF pF tON tOFF 35 300 ns ns Copyright 2002 Rev. K Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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